Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
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چکیده
منابع مشابه
Temperature dependence and physical properties of Ga„NAsP.../GaP semiconductor lasers
We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA /cm2 at 80 K =890 nm . Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall thresho...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2975845